E4D20120A diode equivalent, 20a silicon carbide schottky diode.
* Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
* Zero Reverse Recovery Current / Forward
Recovery Voltage
* Temperature-Independent Swi.
Package Types: TO-220-2 Marking: E4D20120A
Features
* Low Forward Voltage (VF) Drop with Positive
Temperature Coe.
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diode.
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