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GTVA107001EC - High Power RF GaN

General Description

The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.

Key Features

  • GaN on SiC HEMT technology.
  • Input matched.
  • Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle - Output power P3dB = 890 W - Drain efficiency = 75% - Gain = 18 dB.
  • Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ,128 µs pulse width, 10% duty cycle.
  • Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001).
  • Pb-free and RoHS-complia.

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Full PDF Text Transcription (Reference)

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GTVA107001EC/FC High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.