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GTVA107001EC - High Power RF GaN

Wolfspeed

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Datasheet Details

Part number: GTVA107001EC
Manufacturer: Wolfspeed
File Size: 632.40 KB
Datasheet: GTVA107001EC-Wolfspeed.pdf
Description: High Power RF GaN

GTVA107001EC Product details

Description

The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band..

Features

GaN on SiC HEMT technology.
Input matched.
Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle - Output power P3dB = 890 W - Drain efficiency = 75% - Gain = 18 dB.
Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ,128 µs pulse width, 10% duty cycle.
Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001).
Pb-free and RoHS-complia.

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