GTVA123501FA Datasheet Thermally-enhanced High Power Rf Gan

Manufacturer: Wolfspeed

Overview: GTVA123501FA Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 – 1400.

Datasheet Details

Part number	GTVA123501FA
Manufacturer	Wolfspeed
File Size	187.83 KB
Description	Thermally-Enhanced High Power RF GaN
Datasheet	GTVA123501FA-Wolfspeed.pdf

The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band.

input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Efficiency (%) Power Sweep, Pulsed CW VDS = 50 V, IDQ = 100 mA 300 μs pulse width, 10% duty cycle 22 21 20 19 18 17 16 15 0 80 70 60 50 40 Gain: 1200 MHz Gain: 1300 MHz 30 Gain: 1400 MHz Eff: 1200 MHz 20 Eff: 1300 MHz Eff: 1400 MHz g123501fa_gr300-1 10 0 50 100 150 200 250 300 350 400 450 Output Power (W) GTVA123501FA Package H-37265J-2 Features.
GaN on SiC HE.

Part Number	Description
GTVA126001EC	Thermally-Enhanced High Power RF GaN HEMT
GTVA126001FC	Thermally-Enhanced High Power RF GaN HEMT
GTVA104001FA	High Power RF GaN
GTVA107001EC	High Power RF GaN
GTVA107001FC	High Power RF GaN
GTVA261701FA	Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA262701FA	Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA263202FC	Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA355001EC	Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA355001FC	Thermally-Enhanced High Power RF GaN on SiC HEMT