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PTAC210802FC Datasheet Preview

PTAC210802FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET
80 W, 28 V, 1805 – 2170 MHz
Description
The PTAC210802FC is an 80-watt LDMOS FET with an
asymmetrical design intended for use in multi-standard cellular
power amplifier applications in the 1805 to 2170 MHz frequency
band. Features include dual-path design, input matching, high gain
and thermally-enhanced package with earless flange. Manufactured
with Wolfspeed's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
ƒ = 2170 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz, Doherty Fixture
19
Efficiency
18
55
50
17 45
16
Gain
40
15 35
14 30
13
c210802fc-gc
25
32 34 36 38 40 42 44 46 48
Output Power (dBm)
RF Characteristics
PTAC210802FC
Package H-37248-4
Features
• Asymmetrical design
- Main: P1dB = 19 W Typ
- Peak: P1dB = 60 W Typ
• Broadband internal matching
• Wide video bandwidth
• Typical CW pulsed performance, 2170 MHz, 28 V
(Doherty fixture)
- Output power @ P3dB = 75 W
- Efficiency = 48%
- Gain @ P3dB = 14 dB
• Typical CW pulsed performance, 1880 MHz, 28 V
(Doherty fixture)
- Output power @ P1dB = 45 W
- Output power @ P3dB = 80 W
- Efficiency = 48%
- Gain@ P3dB = 14 dB
• Capable of handling 10:1 VSWR @28 V, 80 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1B (per JESD22-A114)
• Pb-free and RoHS compliant
Two-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
VDD = 28 V, IDQ = 85 mA, VGS1 = 1.3 V, POUT = 5 W avg, ƒ1 = 2165 MHz, ƒ2 = 2175 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF, 10 MHz carrier spacing
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Intermodulation Distortion
Gps
hD
IMD
15.5
39
43
–31
17.5
–26
dB
%
dBc
Output PAR at 0.01% probability on CCDF
OPAR 8 — — dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 07, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com




Wolfspeed

PTAC210802FC Datasheet Preview

PTAC210802FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTAC210802FC
RF Characteristics (cont.)
Two-carrier WCDMA Specifications (not subject to production test, verified by design/characterization in Wolfspeed
Doherty test fixture)
VDD = 28 V, IDQ = 150 mA, VGS1 = 2 V, POUT = 5 W avg, ƒ1 = 1880 MHz, ƒ2 = 1870 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF, 10 MHz carrier spacing
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
hD
ACPR
17.5
33.5
18.3
36
–38
19.5
–33
dB
%
dBc
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance (main)
On-State Resistance (peak)
Operating Gate Voltage (main)
(peak)
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, IDQ = 0 V
VGS = 10 V, VDS = 0.1 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 85 mA
VDS = 28 V, IDQ = 360 mA
Symbol
V(BR)DSS
IDSS
IDSS
IGSS
RDS(on)
RDS(on)
VGS
VGS
Min
65
2.30
2.35
Typ
0.6
0.19
2.65
2.70
Max
1
10
1
3.0
3.05
Unit
V
µA
µA
V
W
W
V
V
Maximum Ratings
Parameter
Symbol Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS –6 to +10
V
Operating Voltage
VDD
0 to +32
V
Junction Temperature
TJ
225
°C
Storage Temperature Range
TSTG –65 to +150
°C
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (VDD) specified above.
2
Rev. 07, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com


Part Number PTAC210802FC
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Wolfspeed
Total Page 9 Pages
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