PTAC260302FC fet equivalent, thermally-enhanced high power rf ldmos fet.
include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent .
in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ide.
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