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PTAC260302FC - Thermally-Enhanced High Power RF LDMOS FET

Infineon

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Datasheet Details

Part number: PTAC260302FC
Manufacturer: Infineon ↗
File Size: 438.43 KB
Datasheet: PTAC260302FC-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

PTAC260302FC Product details

Description

The PTAC260302FC is a 30-watt.

Features

include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. ACP Up and ACP Low (dBc) Drain Efficiency(%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2620, 2655, 2690 MHz, 3GPP WCDMA signal, 10 dB PAR, -10 3.84 MHz bandwidth 60 2620 MHz -20 2655 MHz 2690 MHz 50 -30 40 -40 30 Efficiency -50 ACP Up 20 ACP Low -60 28.

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Thermally-Enhanced High Power LDMOS FET Infineon

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