Part number:
PTAC260302FC
Manufacturer:
File Size:
438.43 KB
Description:
Thermally-enhanced high power rf ldmos fet.
PTAC260302FC Datasheet (438.43 KB)
* include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. ACP Up and ACP Low (dBc) Drain Efficiency(%) Single-carrier WCDMA Drive-up VDD = 2
PTAC260302FC Datasheet (438.43 KB)
PTAC260302FC
438.43 KB
Thermally-enhanced high power rf ldmos fet.
📁 Related Datasheet
PTAC260302SC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTA07N65B 650V N-ch Planar MOSFET (PIP)
PTA07N80 800V N-Channel MOSFET (PIP)
PTA1543 Low Profile Slide Potentiometer (Bourns)
PTA2043 Low Profile Slide Potentiometer (Bourns)
PTA20N50A 500V N-Channel MOSFET (PIP)
