PTAC210802FC fet equivalent, thermally-enhanced high power rf ldmos fet.
include dual-path design, input matching, high gain and thermallyenhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device pr.
in the 2110 to 2170 MHz frequency band. Features include dual-path design, input matching, high gain and thermallyenhanc.
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