PTAC210802FC Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

PTAC210802FC thermally-enhanced high power rf ldmos fet by Infineon - Datasheet Preview

Datasheet Details

Part number	PTAC210802FC
Manufacturer	Infineon
File Size	482.70 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTAC210802FC Datasheet

General Description

The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Overview

PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170.

Key Features

include dual-path design, input matching, high gain and thermallyenhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTAC210802FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 19 BW 3.84 MHz, Doherty Fixture Efficiency 18 55 50 17 45 16 G.

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