ZXTN2020F
ZXTN2020F is NPN medium power transistor manufactured by Zetex Semiconductors.
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The pact size and ratings of this device make it ideally suited to applications where space is at a premium.
Features
- -
- - Higher power dissipation SOT23 package High peak current Low saturation voltage 160V forward blocking voltage
Applications
- -
- MOSFET and IGBT gate driving Motor drive Relay, lamp and solenoid drive
Ordering information
Device ZXTN2020FTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000
Pinout
- top view
Device marking
Issue 4
- January 2006
© Zetex Semiconductors plc 2006
.zetex.
Data Sheet 4 U .
..
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current(a) Base current Power dissipation @ TA=25o C(a) Linear derating factor Power dissipation @ TA=25o C(b) Linear derating factor Power dissipation @ TA=25o C(c) Linear derating factor Operating and storage temperature Symbol VCBO V(BR)CEV VCEO VEBO ICM IC IB PD PD PD Tj:Tstg Limit 160 160 100 7 12 4 1 1.0 8 1.2 9.6 1.56 12.5 -55 to +150 Unit V V V V A A A W m W/o C W m W/o C W m W/o C o C
Thermal resistance
Parameter Junction to ambient
(a)
Symbol RθJA RθJA RθJA
Value 125 104 80
Unit o o o
C/W C/W C/W
Junction to ambient (b) Junction to ambient (c)
NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) as (b) above measured at t<5secs.
Issue 4
- January 2006
© Zetex Semiconductors plc 2006
.zetex.
Data Sheet 4 U .
..
Characteristics...