ZXTN2011G Datasheet, Transistor, Diodes

ZXTN2011G Features

• Transistor
• BVCEO > 100V
• IC = 6A Continuous Collector Current
• ICM = 10A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < 65mV max @ 1A
• RSAT = 3

PDF File Details

Part number:

ZXTN2011G

Manufacturer:

DIODES ↗

File Size:

436.32kb

Download:

📄 Datasheet

Description:

Npn transistor.

ZXTN2011G Application

• Applications
• Line Switching
• Motor Driving (including DC fans)
• High Side Switches
• Subscriber Line Interface C

TAGS

ZXTN2011G

Diodes

📁 Related Datasheet

ZXTN2011Z - NPN Transistor (Diodes)
A Product Line of Diodes Incorporated   Green ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features • BVCEO > 100V • IC = 4..

ZXTN2010A - 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR (Zetex Semiconductors)
ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line ou.

ZXTN2010G - NPN Transistor (Diodes)
Green ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR SOT223 Features  BVCEO > 60V  IC = 6A Continuous Collector Current  ICM = 20A Peak .

ZXTN2010Z - NPN Transistor (Diodes)
Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > 60V  IC = 5A High Continuous Current  RSAT = 30mΩ for a .

ZXTN2018F - NPN medium power transistor (Zetex Semiconductors)
ZXTN2018F 60V, SOT23, NPN medium power transistor Summary V(BR)CEV > 140V, V(BR)CEO > 60V IC(cont) = 5A RCE(sat) = 25 m⍀ typical VCE(sat) < 45 mV @ 1.

ZXTN2018FQ - 60V NPN MEDIUM POWER TRANSISTOR (Diodes)
ZXTN2018FQ 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement .

ZXTN2005G - 25V NPN LOW SATURATION TRANSISTOR (Diodes)
A Product Line of Green Diodes Incorporated ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > 60V  IC = 7A Continuous Coll.

ZXTN2005Z - 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR (Zetex Semiconductors)
.. ZXTN2005Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packa.

ZXTN2007G - 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR (Diodes)
Green ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > 30V  IC = 7A Continuous Collector Current  ICM = 20A Pe.

ZXTN2007Z - 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR (Zetex Semiconductors)
ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 out.