ZXTN2011G Datasheet - Diodes

ZXTN2011G NPN Transistor

ZXTN2011G Features

* BVCEO > 100V

* IC = 6A Continuous Collector Current

* ICM = 10A Peak Pulse Current

* Low Saturation Voltage VCE(sat) < 65mV max @ 1A

* RSAT = 36mΩ @ Ic =6A for Low Equivalent On-Resistance

* hFE Specified up to 10A for High Gain Hold Up

* Lead-Free Finish; RoHS Complian

Datasheet Details

ZXTN2011G

436.32 KB

Npn transistor.

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