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ZXTN2011Z Datasheet - Diodes

NPN Transistor

ZXTN2011Z Features

* BVCEO > 100V

* IC = 4.5A high Continuous Current

* ICM = 10A Peak Pulse Current

* RCE(sat) = 31mΩ for a low equivalent On-Resistance

* Low saturation voltage VCE(sat) < 60mV @ IC = 1A

* hFE specified up to 10A for high current gain hold up

ZXTN2011Z Datasheet (245.54 KB)

Preview of ZXTN2011Z PDF

Datasheet Details

Part number:

ZXTN2011Z

Manufacturer:

DIODES ↗

File Size:

245.54 KB

Description:

Npn transistor.

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ZXTN2011Z NPN Transistor Diodes

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