* Higher power dissipation SOT23 package
* High peak current
* Low saturation voltage
* 140V forward blocking voltage Applications
* MOSFET and IGBT gate driving
* Motor drive
* Relay, lamp and solenoid drive Ordering information Device ZXTN
ZXTN2018F Datasheet (460.38 KB)
ZXTN2018F
Zetex Semiconductors
460.38 KB
Npn medium power transistor.
ZXTN2018F 60V, SOT23, NPN medium power transistor
Summary
V(BR)CEV > 140V, V(BR)CEO > 60V IC(cont) = 5A RCE(sat) = 25 m⍀ typical VCE(sat) < 45 mV @ 1.
📁 Related Datasheet
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Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement .
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SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A
DESCRIPTION
Packaged in the E-line ou.
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Features
BVCEO > 60V IC = 6A Continuous Collector Current ICM = 20A Peak .
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ZXTN2011G - NPN Transistor
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BVCEO > 100V IC = 6A Continuous Collector Current ICM = 10A .
ZXTN2011Z - NPN Transistor
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A Product Line of Diodes Incorporated
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ZXTN2011Z
100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Features
• BVCEO > 100V • IC = 4..
ZXTN2005G - 25V NPN LOW SATURATION TRANSISTOR
(Diodes)
A Product Line of
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Diodes Incorporated
ZXTN2005G
25V NPN LOW SATURATION TRANSISTOR IN SOT223
Features
BVCEO > 60V IC = 7A Continuous Coll.
ZXTN2005Z - 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR
(Zetex Semiconductors)
..
ZXTN2005Z
25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION
Packa.
