ZXTN2018FQ Datasheet, Transistor, Diodes

ZXTN2018FQ Features

• Transistor
• BVCEO > 60V
• Maximum Continuous Collector Current IC = 5A
• VCE(SAT) < 45mV @ 1A
• RCE(SAT) = 25mΩ
• High Power Dissipation SOT23 (Type DN) Pa

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Part number:

ZXTN2018FQ

Manufacturer:

DIODES ↗

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📄 Datasheet

Description:

60v npn medium power transistor. This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications. Features

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ZXTN2018FQ Application

• Applications Features
• BVCEO > 60V
• Maximum Continuous Collector Current IC = 5A
• VCE(SAT) < 45mV @ 1A
• RCE(SAT

TAGS

ZXTN2018FQ

Diodes

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