ZXTN2010G Datasheet - Diodes

ZXTN2010G - NPN Transistor

ZXTN2010G Features

* BVCEO > 60V

* IC = 6A Continuous Collector Current

* ICM = 20A Peak Pulse Current

* Low Saturation Voltage VCE(SAT) < 60mV Max @ 1A

* RSAT = 35mΩ @ Ic =6A for Low Equivalent On-Resistance

* hFE Specified up to 10A for High Gain Hold Up

* Lead-Free Finish; RoHS Compliant

Datasheet Details

ZXTN2010G

472.77 KB

Npn transistor.

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