ZXTN23015CFH
Zetex Semiconductors
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Npn medium power transistor. Advanced process capability and package design have been used to maximize the power handling and performance of this small outline tr
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ZXTN2005G - 25V NPN LOW SATURATION TRANSISTOR
(Diodes)
A Product Line of
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Diodes Incorporated
ZXTN2005G
25V NPN LOW SATURATION TRANSISTOR IN SOT223
Features
BVCEO > 60V IC = 7A Continuous Coll.
ZXTN2005Z - 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR
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..
ZXTN2005Z
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SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION
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ZXTN2007G - 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR
(Diodes)
Green ZXTN2007G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BVCEO > 30V IC = 7A Continuous Collector Current ICM = 20A Pe.
ZXTN2007Z - 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR
(Zetex Semiconductors)
ZXTN2007Z
30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A
DESCRIPTION
Packaged in the SOT89 out.
ZXTN2010A - 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR
(Zetex Semiconductors)
ZXTN2010A
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A
DESCRIPTION
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ZXTN2010G - NPN Transistor
(Diodes)
Green ZXTN2010G
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Features
BVCEO > 60V IC = 6A Continuous Collector Current ICM = 20A Peak .
ZXTN2010Z - NPN Transistor
(Diodes)
Green ZXTN2010Z
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Features
BVCEO > 60V IC = 5A High Continuous Current RSAT = 30mΩ for a .
ZXTN2011G - NPN Transistor
(Diodes)
Green ZXTN2011G
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BVCEO > 100V IC = 6A Continuous Collector Current ICM = 10A .
ZXTN2011Z - NPN Transistor
(Diodes)
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ZXTN2011Z
100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Features
• BVCEO > 100V • IC = 4..
ZXTN2018F - NPN medium power transistor
(Zetex Semiconductors)
ZXTN2018F 60V, SOT23, NPN medium power transistor
Summary
V(BR)CEV > 140V, V(BR)CEO > 60V IC(cont) = 5A RCE(sat) = 25 m⍀ typical VCE(sat) < 45 mV @ 1.