LMG3426R030 - GaN FET

Product Overview

Texas Instruments

Datasheet Details

Part number	LMG3426R030
Manufacturer	Texas Instruments
File Size	2.73 MB
Description	GaN FET
Datasheet	LMG3426R030 Datasheet
Note	This datasheet PDF includes multiple part numbers: LMG3426R030, LMG3422R030. Please refer to the document for exact specifications by model.
Additional preview pages of the LMG3426R030 datasheet.

Product details

Description

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

Features

Qualified for JEDEC JEP180 for hard-switching topologies.
600V GaN-on-Si FET with integrated gate driver.
Integrated high precision gate bias voltage.
200V/ns FET hold-off.
2.2MHz switching frequency.
20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation.
Operates from 7.5V to 18V supply.
Robust protection.
Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100n.

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Published: Mar 28, 2024 |