LMG3426R030 Datasheet | Texas Instruments

Features - Qualified for JEDEC JEP180 for hard-switching topologies - 600V Ga N-on-Si FET with integrated gate driver - Integrated high precision gate bias voltage - 200V/ns FET hold-off - 2.2MHz switching frequency - 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation - Operates from 7.5V to 18V supply - Robust protection - Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100ns response - Withstands 720V surge while hard-switching - Self-protection from internal overtemperature and UVLO monitoring - Advanced power management - Digital temperature PWM output - LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters 2 Applications - Switch-mode power converters - Merchant network and server PSU - Merchant tele rectifiers - Solar inverters and industrial motor drives - Uninterruptible power supplies RDRV IN Slew Rate LDO5V TEMP Direct-Drive SOURCE DRAIN Ga N LDO, BB VNEG OCP, SCP, OTP, UVLO Current FAULT OC or ZVD SOURCE Simplified Block Diagram 3 Description The LMG342x R030 Ga N FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG342x R030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA pared to discrete silicon gate drivers. This integration, bined with TI's lowinductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized. Advanced power management features include digital temperature...