NP120N03D6 mosfet equivalent, 30v n-channel enhancement mode mosfet.
* VDS =30V，ID =120A RDS(ON)(Typ.)= 2.1mΩ @VGS=10V RDS(ON)(Typ.)= 2.9mΩ @VGS=4.5V
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* 100% UI.
XXXX—Wafer Information YYYY—Quality Code
Ordering Information
Part Number NP120N03D6-G
Storage Temperature -55°C to .
Schematic diagram
The NP120N03D6 uses Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R.
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