NP12N30G mosfet equivalent, 300v n-channel enhancement mode mosfet.
* VDS =300V，ID =12A
RDS(ON)(Typ.)= 250mΩ @VGS=10V
* High density cell design for ultra low Rdson
Marking and pin assignment
* Fully characterized avalanch.
General Features
* VDS =300V，ID =12A
RDS(ON)(Typ.)= 250mΩ @VGS=10V
* High density cell design for ultra low .
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