100v n-channel enhancement mode mosfet.
* VDS =100V,ID=260A
RDS(ON)(Typ.)=2.2m @VGS=10V
* High power and current handing capability
* Lead free product is a acquired
* Surface mount package
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General Features
* VDS =100V,ID=260A
RDS(ON)(Typ.)=2.2m @VGS=10V
* High power and current handing capability <.
Schematic diagram
The NP260S10LL uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS =100V,ID=260A
RDS(ON)(Typ.)=2.2m @VGS=10V
* High.
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