NP6008BSR Datasheet - natlinear

NP6008BSR 60V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi.

NP6008BSR Features

* Marking and pin assignment

* VDS =60V，ID =8A RDS(ON)(Typ.)=32mΩ @VGS=10V RDS(ON)(Typ.)=39mΩ @VGS=4.5V

* Excellent gate charge RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* 100% UIS tested Application HF Pb

* Synchronus Rectific

NP6008BSR Datasheet (360.89 KB)

NP6008BSR Datasheet Preview — Preview of NP6008BSR PDF

Datasheet Details

Part number:

NP6008BSR

Manufacturer:

natlinear

File Size:

360.89 KB

Description:

60v n-channel enhancement mode mosfet.

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NP6008BSR 60V N-Channel Enhancement Mode MOSFET natlinear

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