NP6008N mosfet equivalent, 60v n-channel enhancement mode mosfet.
D G
* VDS =60V ID =10A
RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω)
S
RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω)
* High density cell design for ultra low Rdson.
Marking and pi.
General Features
D G
* VDS =60V ID =10A
RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω)
S
RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω).
Schematic diagram
The NP6008N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
D G
* VDS =60V ID =10A
RDS(ON)<25mΩ @VGS=10V (Typ:.
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