GAN039-650NBB fet equivalent, gallium nitride (gan) fet.
* Simplified driver design as standard level MOSFET gate drivers can be used:
* 0 V to 12 V drive voltage
* Gate threshold voltage VGSth of 4 V
* Robust g.
* Hard and soft switching converters for industrial and datacom power
* Bridgeless totempole PFC
* PV and UP.
The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reli.
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