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GAN041-650WSB - GaN FET

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nexperia

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GAN041-650WSB GaN FET by nexperia - Datasheet Preview — Datasheet preview – GAN041-650WSB

Datasheet Details

Part number	GAN041-650WSB
Manufacturer	nexperia
File Size	310.87 KB
Description	GaN FET
Datasheet	GAN041-650WSB Datasheet
Additional preview pages of the GAN041-650WSB datasheet.

Product details

Description

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. offering superior reliability and performance.

Features

Ultra-low reverse recovery charge.
Simple gate drive (0 V to +10 V or 12 V).
Robust gate oxide (±20 V capability).
High gate threshold voltage (+4 V) for very good gate bounce immunity.
Very low source-drain voltage in reverse conduction mode.
Transient over-voltage capability 3.

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Published: Sep 5, 2023 |