GAN039-650NTB Overview
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that bines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies offering superior reliability and performance.
GAN039-650NTB Key Features
- Simplified driver design as standard level MOSFET gate drivers can be used
- 0 V to 12 V drive voltage
- Gate threshold voltage VGSth of 4 V
- Robust gate oxide with ±20 V VGS rating
- High gate threshold voltage of 4 V for gate bounce immunity
- Low body diode Vf for reduced losses and simplified dead-time adjustments
- Transient over-voltage capability for increased robustness
- CCPAK package technology
- Improved reliability, with reduced Rth(j-mb) for optimal cooling
- Lower inductances for lower switching losses and EMI
GAN039-650NTB Applications
- Hard and soft switching converters for industrial and data power