GAN039-650NTB datasheet, fet equivalent, nexperia

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GAN039-650NTB Features and benefits

* Simplified driver design as standard level MOSFET gate drivers can be used:
* 0 V to 12 V drive voltage
* Gate threshold voltage VGSth of 4 V
* Robust g.

GAN039-650NTB Application

* Hard and soft switching converters for industrial and datacom power
* Bridgeless totempole PFC
* PV and UP.

GAN039-650NTB Description

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering sup.

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