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SSC8129GQ4

P-Channel Enhancement Mode MOSFET

SSC8129GQ4 General Description

Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and batt.

SSC8129GQ4 Datasheet (798.17 KB)

Preview of SSC8129GQ4 PDF

Datasheet Details

Part number:

SSC8129GQ4

Manufacturer:

AFSEMI

File Size:

798.17 KB

Description:

P-channel enhancement mode mosfet.

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SSC8129GQ4 P-Channel Enhancement Mode MOSFET AFSEMI

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