SSC8129GS1 P-Channel Enhancement Mode MOSFET

Description

SSC8129GS1 P-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

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Datasheet Specifications

Part number: SSC8129GS1
Manufacturer: AFSEMI
File Size: 804.57 KB
Datasheet: SSC8129GS1-AFSEMI.pdf
Description: P-Channel Enhancement Mode MOSFET

Features

* VDS -20V VGS ±12V RDSon TYP 10mR@-4V5V 13mR@-2V5 ID -18A

Applications

* Load Switch
* DCDC conversion
* NB battery
* Pin configuration

SSC8129GS1 Distributors

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SSC8129GS1 P-Channel Enhancement Mode MOSFET AFSEMI

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