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SSC8129GS1 P-Channel Enhancement Mode MOSFET

SSC8129GS1 Description

SSC8129GS1 P-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

SSC8129GS1 Features

* VDS -20V VGS ±12V RDSon TYP 10mR@-4V5V 13mR@-2V5 ID -18A

SSC8129GS1 Applications

* Load Switch
* DCDC conversion
* NB battery
* Pin configuration

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Datasheet Details

Part number
SSC8129GS1
Manufacturer
AFSEMI
File Size
804.57 KB
Datasheet
SSC8129GS1-AFSEMI.pdf
Description
P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET AFSEMI
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