SBT5551F NPN Silicon Transistor

AUK corp

SBT5551F Description

Semiconductor SBT5551F NPN Silicon Transistor .
General purpose amplifier. High voltage application Features. high collector breakdown voltage : VCBO = 180V, VCEO = 160.

SBT5551F Features

* high collector breakdown voltage : VCBO = 180V, VCEO = 160V
* Low collector saturation voltage : VCE(sat)=0.5V(MAX. )
* Complementary pair with SBT5401F Ordering Information Type NO. SBT5551F Marking FNF Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1

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Datasheet Details

Part number: SBT5551F
Manufacturer: AUK corp
File Size: 191.39 KB
Datasheet: SBT5551F_AUKcorp.pdf
Description: NPN Silicon Transistor

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NPN Silicon Transistor AUK corp

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