AP28G40GEJ Datasheet - Advanced Power Electronics

AP28G40GEJ N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free AP28G40GEH/J Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR G CE TO-252(H) VCE ICP G 400V 150A C G C E TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage ±6 ICP Pulsed Collector Current, VGE @.

AP28G40GEJ Datasheet (135.90 KB)

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Datasheet Details

Part number:

AP28G40GEJ

Manufacturer:

Advanced Power Electronics

File Size:

135.90 KB

Description:

N-channel insulated gate bipolar transistor.

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AP28G40GEJ N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics

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