Datasheet Specifications
- Part number
- AP28G45GEM
- Manufacturer
- Advanced Power Electronics
- File Size
- 70.80 KB
- Datasheet
- AP28G45GEM-AdvancedPowerElectronics.pdf
- Description
- N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Description
Advanced Power Electronics Corp.AP28G45GEM Pb Free Plating Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick C.
Applications
* C C C C SO-8 G E E E VCE ICP G 450V 130A C E Absolute Maximum Ratings Symbol Parameter VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation Storage Temperature Range OpAP28G45GEM Distributors
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