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AP28G45GEM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Description

Advanced Power Electronics Corp.AP28G45GEM Pb Free Plating Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick C.

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Datasheet Specifications

Part number
AP28G45GEM
Manufacturer
Advanced Power Electronics
File Size
70.80 KB
Datasheet
AP28G45GEM-AdvancedPowerElectronics.pdf
Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Applications

* C C C C SO-8 G E E E VCE ICP G 450V 130A C E Absolute Maximum Ratings Symbol Parameter VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation Storage Temperature Range Op

AP28G45GEM Distributors

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics
Advanced Power Electronics AP28G45GEM-like datasheet