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AP28G45EM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Description

AP28G45EM Advanced Power Electronics Corp.N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability ▼ 3.3V.

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Datasheet Specifications

Part number
AP28G45EM
Manufacturer
Advanced Power Electronics
File Size
69.86 KB
Datasheet
AP28G45EM-AdvancedPowerElectronics.pdf
Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Applications

* C C C C SO-8 G E E E VCE ICP G 450V 130A C E Absolute Maximum Ratings Symbol Parameter VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation Storage Temperature Range Op

AP28G45EM Distributors

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics
Advanced Power Electronics AP28G45EM-like datasheet