AP28G45EM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics

Description

AP28G45EM Advanced Power Electronics Corp.N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability ▼ 3.3V.

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Datasheet Specifications

Part number: AP28G45EM
Manufacturer: Advanced Power Electronics
File Size: 69.86 KB
Datasheet: AP28G45EM-AdvancedPowerElectronics.pdf
Description: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Applications

* C C C C SO-8 G E E E VCE ICP G 450V 130A C E Absolute Maximum Ratings Symbol Parameter VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation Storage Temperature Range Op

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AP28G45EM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics

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