AP28G45EM Datasheet (Advanced Power Electronics) - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP28G45EM, N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP28G45EM Advanced Power Electronics Corp.

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability ▼ 3.3V Gate Drive ▼ Strobe Flash Applications C C C C SO-8 G E E E VCE ICP G 450V 130A C E Absolute Maximum Ratings Symbol Parameter VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation Storage Temperature Range Operating Ju