AP28G40GEM-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP28G40GEM-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak C.

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Datasheet Specifications

Part number: AP28G40GEM-HF
Manufacturer: Advanced Power Electronics
File Size: 63.86 KB
Datasheet: AP28G40GEM-HF-AdvancedPowerElectronics.pdf
Description: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Applications

* ▼ RoHS Compliant & Halogen-Free C C C C SO-8 VCE ICP G E EE G 400V 150A C E Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VCE VGEP ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3V M

AP28G40GEM-HF Distributors

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AP28G40GEM-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics

Advanced Power Electronics AP28G40GEM-HF-like datasheet