AP28G45GEO-HF Datasheet (Advanced Power Electronics) - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP28G45GEO-HF, N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp.

▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications AP28G45GEO-HF RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR E E E G TSSOP-8 C C C C VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGE ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 2.5V Maximum Power Dissipation Storage Temperature Range Operating Junc