AP28G45GEO-HF Datasheet - Advanced Power Electronics

AP28G45GEO-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications AP28G45GEO-HF RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR E E E G TSSOP-8 C C C C VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGE ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 2.5V Maximum Power Dissipation Storage Temperature Range Operating Junc.

AP28G45GEO-HF Datasheet (89.42 KB)

AP28G45GEO-HF Datasheet Preview — Preview of AP28G45GEO-HF PDF

Datasheet Details

Part number:

AP28G45GEO-HF

Manufacturer:

Advanced Power Electronics

File Size:

89.42 KB

Description:

N-channel insulated gate bipolar transistor.

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AP28G45GEO-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics

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