AP28G40GEO Datasheet - Advanced Power Electronics

AP28G40GEO N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp. AP28G40GEO RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications C C C C TSSOP-8 G E E E VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGEP ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 2.5V Maximum Power Dissipation Storage Temperature Range Operating Junct.

AP28G40GEO Datasheet (90.92 KB)

AP28G40GEO Datasheet Preview — Preview of AP28G40GEO PDF

Datasheet Details

Part number:

AP28G40GEO

Manufacturer:

Advanced Power Electronics

File Size:

90.92 KB

Description:

N-channel insulated gate bipolar transistor.

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AP28G40GEO N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics

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