Datasheet Specifications
- Part number
- AP28G40GEO
- Manufacturer
- Advanced Power Electronics
- File Size
- 90.92 KB
- Datasheet
- AP28G40GEO-AdvancedPowerElectronics.pdf
- Description
- N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Description
Advanced Power Electronics Corp.AP28G40GEO RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Cu.
Applications
* C C C C TSSOP-8 G E E E VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGEP ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 2.5V Maximum Power Dissipation Storage Temperature Range Operating Junction TemperatAP28G40GEO Distributors
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