AP28G40GEO Datasheet (Advanced Power Electronics) - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP28G40GEO, N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp.

AP28G40GEO RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications C C C C TSSOP-8 G E E E VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGEP ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 2.5V Maximum Power Dissipation Storage Temperature Range Operating Junct