MRF5812 Bipolar Junction Transistor

Advanced Power Technology

Description

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish .
Designed for high current, low power, low noise, amplifiers up to 1.

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Datasheet Specifications

Part number: MRF5812
Manufacturer: Advanced Power Technology
File Size: 147.36 KB
Datasheet: MRF5812_AdvancedPowerTechnology.pdf
Description: Bipolar Junction Transistor

Features

* Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix
* Tape and Reel, 500 units R2 suffix

MRF5812 Distributors

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MRF5812 Bipolar Junction Transistor Advanced Power Technology

Advanced Power Technology MRF5812-like datasheet