Part number:
MRF555
Manufacturer:
Advanced Semiconductor
File Size:
63.10 KB
Description:
Npn silicon rf transistor.
* 12.5 V, 470 MHz.
* POUT = 1.5 W
* GP = 11 min.
* η = 60 % (Typ) MAXIMUM RATINGS IC 500 mA VCBO 30 V PDISS 3.0 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 41.7 °C/W PACKAGE STYLE MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.45 5.21
MRF555
Advanced Semiconductor
63.10 KB
Npn silicon rf transistor.
📁 Related Datasheet
MRF553 NPN SILICON RF LOW POWER TRANSISTOR (Motorola)
MRF553 NPN SILICON RF TRANSISTOR (ASI)
MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
MRF553G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
MRF555 NPN SILICON RF LOW POWER TRANSISTOR (Motorola)
MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
MRF557G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)