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AP01L60T-H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01L60T-H-HF Description

Advanced Power Electronics Corp.AP01L60T-H-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Chara.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness.

AP01L60T-H-HF Applications

* BVDSS RDS(ON) ID G D S 700V 13.5Ω 160mA TO-92 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol . Parameter Rating Units VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage +30 V ID@TA=25℃ Drain Current, VGS @ 10V 160 mA ID@TA=100℃ IDM Drain Current, VGS @ 10V Pu

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
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