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AP2306N N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2306N Description

AP2306N Advanced Power Electronics Corp.▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package S D N-CHANNEL ENHANCEMENT MODE P.
SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-.

AP2306N Applications

* D G S Absolute Maximum Ratings www. DataSheet4U. com Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 20 ± 12 5.3 4.3 10 1.3

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Datasheet Details

Part number
AP2306N
Manufacturer
Advanced Power Electronics
File Size
104.15 KB
Datasheet
AP2306N_AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP2306N-like datasheet