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AFN1055S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN1055S, a member of the AFN1055S-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN1055S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/40A,RDS(ON)=6.0mΩ@VGS=10V.
  • 100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TO-220-3L package design.

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Datasheet Details

Part number AFN1055S
Manufacturer Alfa-MOS
File Size 363.90 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1055S Datasheet
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Alfa-MOS Technology AFN1055S 100V N-Channel Enhancement Mode MOSFET General Description AFN1055S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) Features  100V/40A,RDS(ON)=6.0mΩ@VGS=10V  100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  TO-220-3L package design Application  Power Supply - Secondary Synchronous Rectification  Industrial  Primary Switch Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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