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AFN123WS, AFN123WS-Alfa N-Channel Enhancement Mode MOSFET

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Description

Alfa-MOS Technology General .
AFN123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFN123WS, AFN123WS-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFN123WS, AFN123WS-Alfa
Manufacturer
Alfa-MOS
File Size
609.14 KB
Datasheet
AFN123WS-Alfa-MOS.pdf
Description
N-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFN123WS, AFN123WS-Alfa.
Please refer to the document for exact specifications by model.

Features

* 100V/0.17A , RDS(ON)=5.8Ω@VGS=10V 100V/0.17A , R DS(ON)=6.8Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Diode design

AFN123WS Distributors

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