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AFN123WS Datasheet - Alfa-MOS

AFN123WS N-Channel Enhancement Mode MOSFET

AFN123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN123WS Features

* 100V/0.17A , RDS(ON)=5.8Ω@VGS=10V 100V/0.17A , R DS(ON)=6.8Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Diode design

* in SOT-323 package design Application Drivers: Relays, Solenoids, Lamps, Ha

AFN123WS Datasheet (609.14 KB)

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Datasheet Details

Part number:

AFN123WS

Manufacturer:

Alfa-MOS

File Size:

609.14 KB

Description:

N-channel enhancement mode mosfet.

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TAGS

AFN123WS N-Channel Enhancement Mode MOSFET Alfa-MOS

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