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AFN1304E, AFN1304E-Alfa Datasheet - Alfa-MOS

AFN1304E N-Channel Enhancement Mode MOSFET

AFN1304E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN1304E Features

* 20V/1.8A,RDS(ON)=400mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=500mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=680mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-323 package design Application Net Working System Drivers: Relays,

AFN1304E-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN1304E, AFN1304E-Alfa. Please refer to the document for exact specifications by model.
AFN1304E Datasheet Preview Page 2 AFN1304E Datasheet Preview Page 3

Datasheet Details

Part number:

AFN1304E, AFN1304E-Alfa

Manufacturer:

Alfa-MOS

File Size:

593.20 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN1304E, AFN1304E-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN1304E AFN1304E-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN1304E Distributor