AFN1306, AFN1306-Alfa - N-Channel Enhancement Mode MOSFET

Alfa-MOS

Datasheet Details

Part number	AFN1306, AFN1306-Alfa
Manufacturer	Alfa-MOS
File Size	798.46 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN1306-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFN1306, AFN1306-Alfa. Please refer to the document for exact specifications by model.

AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

30V/1.5A,RDS(ON)=430mΩ@VGS=4.5V 30V/1.2A,RDS(ON)=580mΩ@VGS=2.5V 30V/0.6A,RDS(ON)=860mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design.

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Published: Dec 11, 2018 |