AFN1306

N-Channel Enhancement Mode MOSFET

Alfa-MOS

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Datasheet Details

Part number:

AFN1306

Manufacturer:

Alfa-MOS

File Size:

798.46 KB

Description:

N-channel enhancement mode mosfet.
Alfa-MOS Technology General Description AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Tr.
AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS.

✔ AFN1306 Features

30V/1.5A,RDS(ON)=430mΩ@VGS=4.5V 30V/1.2A,RDS(ON)=580mΩ@VGS=2.5V 30V/0.6A,RDS(ON)=860mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-r

✔ AFN1306 Application

Pin Description ( SOT-323 ) AFN1306 30V N-Channel Enhancement Mode MOSFET Features 30V/1.5A,RDS(ON)=430mΩ@

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AFN1306 N-Channel Enhancement Mode MOSFET Alfa-MOS

Datasheet Details

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Description:

✔ AFN1306 Features

✔ AFN1306 Application

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