AFN1602E, AFN1602E-Alfa - 20V N-Channel Enhancement Mode MOSFET

Alfa-MOS

The AFN1602E by Alfa-MOS is a 20V N-Channel Enhancement Mode MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	AFN1602E, AFN1602E-Alfa
Manufacturer	Alfa-MOS
File Size	759.64 KB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	AFN1602E-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFN1602E, AFN1602E-Alfa. Please refer to the document for exact specifications by model.
Additional preview pages of the AFN1602E datasheet.

AFN1602E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/0.8A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.7A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected DFN1.0X0.6-3L package design.

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Published: Nov 22, 2018 |