AFN2326S, AFN2326S-Alfa Datasheet - Alfa-MOS

AFN2326S 150V N-Channel Enhancement Mode MOSFET

AFN2326S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN2326S Features

* ID=1.5A,RDS(ON)=320mΩ@VGS=10V

* ID=1.4A,RDS(ON)=340mΩ@VGS=6V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-3L package design Application

* DC/DC Converters

* Load Switch

* LED Back

AFN2326S-Alfa-MOS.pdf

AFN2326S Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN2326S, AFN2326S-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN2326S, AFN2326S-Alfa

Manufacturer:

Alfa-MOS

File Size:

330.02 KB

Description:

150v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN2326S, AFN2326S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN2326S AFN2326S-Alfa 150V N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN2326S Distributor