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AFN2376

N-Channel Enhancement Mode MOSFET

AFN2376 Features

* 60V/5.4A,RDS(ON)=46mΩ@VGS=10V

* 60V/3.8A,RDS(ON)=54mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-3L package design Application

* Portable Equipment

* Battery Powered System

AFN2376 General Description

AFN2376, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFN2376 Datasheet (343.52 KB)

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Preview of AFN2376 PDF

Datasheet Details

Part number:

AFN2376

Manufacturer:

Alfa-MOS

File Size:

343.52 KB

Description:

N-channel enhancement mode mosfet.

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TAGS

AFN2376 N-Channel Enhancement Mode MOSFET Alfa-MOS

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