AFN3606S Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN3606S Features

* 30V/45A,RDS(ON)=5.0mΩ@VGS=10V 30V/30A,RDS(ON)=6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Buck Converter

* High Side

* Low Side Synchronous Rectifier

* Secondary Rectifier Pin Define Pin 1 2 3 Symbol G D S

AFN3606S General Description

AFN3606S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN3606S Datasheet (600.82 KB)

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Datasheet Details

Part number:

AFN3606S

Manufacturer:

Alfa-MOS

File Size:

600.82 KB

Description:

N-channel enhancement mode mosfet.

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AFN3606S N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN3606S Features

AFN3606S General Description

Datasheet Details

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AFN3606S Distributor