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AFN3015S, AFN3015S-Alfa Datasheet - Alfa-MOS

AFN3015S N-Channel Enhancement Mode MOSFET

AFN3015S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN3015S Features

* 30V/45A,RDS(ON)=5.1mΩ@VGS=10V 30V/30A,RDS(ON)=6.8mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Buck Converter

* High Side

* Low Side Synchronous Rectifier

* Secondary Rectifier Pin Define Pin 1 2 3 Symbol G S D

AFN3015S-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN3015S, AFN3015S-Alfa. Please refer to the document for exact specifications by model.
AFN3015S Datasheet Preview Page 2 AFN3015S Datasheet Preview Page 3

Datasheet Details

Part number:

AFN3015S, AFN3015S-Alfa

Manufacturer:

Alfa-MOS

File Size:

863.11 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN3015S, AFN3015S-Alfa.
Please refer to the document for exact specifications by model.

AFN3015S Distributor

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TAGS

AFN3015S AFN3015S-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS