AFN3009S - N-Channel Enhancement Mode MOSFET
AFN3009S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descripti
AFN3009S Features
* 30V/35A,RDS(ON)=8.5mΩ@VGS=10V
* 30V/20A,RDS(ON)=11.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-252-2L package design Application
* Buck Converter
* High Side
* Low Side
* Synchronous Rectifier
* Secondary Rectifier
