AFN3009S, AFN3009S-Alfa N-Channel Enhancement Mode MOSFET

Alfa-MOS

Description

Alfa-MOS Technology General .
AFN3009S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

📥 Download Datasheet

AFN3009S Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN3009S, AFN3009S-Alfa. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: AFN3009S, AFN3009S-Alfa
Manufacturer: Alfa-MOS
File Size: 417.54 KB
Datasheet: AFN3009S-Alfa-MOS.pdf
Description: N-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: AFN3009S, AFN3009S-Alfa.
Please refer to the document for exact specifications by model.

Features

* 30V/35A,RDS(ON)=8.5mΩ@VGS=10V
* 30V/20A,RDS(ON)=11.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)

AFN3009S Distributors

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📌 All Tags

AFN3009S-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

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