AFN3009S Datasheet, Mosfet, Alfa-MOS

✔ AFN3009S Features

30V/35A,RDS(ON)=8.5mΩ@VGS=10V
30V/20A,RDS(ON)=11.5mΩ@VGS=4.5V
Super high density cell design for extremely low RDS (ON)
TO-252-2L package design Application
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✔ AFN3009S Application

Pin Description ( TO-252-2L ) AFN3009S 30V N-Channel Enhancement Mode MOSFET Features
30V/35A,RDS(ON)=8.

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Part number:

AFN3009S

Manufacturer:

Alfa-MOS

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417.54kb

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📄 Datasheet

Description:

N-channel enhancement mode mosfet. AFN3009S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

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AFN3009S N-Channel Enhancement Mode MOSFET Alfa-MOS