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AFN3030, AFN3030-Alfa Datasheet - Alfa-MOS

AFN3030 N-Channel Enhancement Mode MOSFET

AFN3030, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFN3030 Features

* 30V/12A,RDS(ON)= 30mΩ@VGS=10V 30V/10A,RDS(ON)= 40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Orde

AFN3030-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN3030, AFN3030-Alfa. Please refer to the document for exact specifications by model.
AFN3030 Datasheet Preview Page 2 AFN3030 Datasheet Preview Page 3

Datasheet Details

Part number:

AFN3030, AFN3030-Alfa

Manufacturer:

Alfa-MOS

File Size:

833.27 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN3030, AFN3030-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN3030 AFN3030-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN3030 Distributor