AFN3006S - N-Channel Enhancement Mode MOSFET
AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descripti
AFN3006S Features
* 30V/45A,RDS(ON)=6mΩ@VGS=10V 30V/30A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Buck Converter
* High Side
* Low Side Synchronous Rectifier
* Secondary Rectifier Pin Define Pin 1 2 3 Symbol G S D Ord
