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AFN3006S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN3006S, a member of the AFN3006S-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/45A,RDS(ON)=6mΩ@VGS=10V 30V/30A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Datasheet preview – AFN3006S

Datasheet Details

Part number AFN3006S
Manufacturer Alfa-MOS
File Size 863.04 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN3006S Datasheet
Additional preview pages of the AFN3006S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN3006S 30V N-Channel Enhancement Mode MOSFET Features 30V/45A,RDS(ON)=6mΩ@VGS=10V 30V/30A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Buck Converter − High Side − Low Side Synchronous Rectifier − Secondary Rectifier Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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