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AFN3025S, AFN3025S-Alfa Datasheet - Alfa-MOS

AFN3025S N-Channel Enhancement Mode MOSFET

AFN3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN3025S Features

* 30V/9.0A,RDS(ON)=32mΩ@VGS=10V 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook Computer Pin Define Pin 1 2 3 Symbol G

AFN3025S-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN3025S, AFN3025S-Alfa. Please refer to the document for exact specifications by model.
AFN3025S Datasheet Preview Page 2 AFN3025S Datasheet Preview Page 3

Datasheet Details

Part number:

AFN3025S, AFN3025S-Alfa

Manufacturer:

Alfa-MOS

File Size:

771.59 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN3025S, AFN3025S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN3025S AFN3025S-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN3025S Distributor