AFN3019S, AFN3019S-Alfa Datasheet - Alfa-MOS

AFN3019S N-Channel Enhancement Mode MOSFET

AFN3019S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN3019S Features

* 30V/35A,RDS(ON)=9mΩ@VGS=10V

* 30V/20A,RDS(ON)=13mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* TO-252-2L package design Application

* Buck Converter

* Low Side

* Synchronous Rectifier

* Secondary Rectifier Pin Define Pin 1 2 3

AFN3019S-Alfa-MOS.pdf

AFN3019S Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN3019S, AFN3019S-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN3019S, AFN3019S-Alfa

Manufacturer:

Alfa-MOS

File Size:

495.48 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN3019S, AFN3019S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN3019S AFN3019S-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

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