AFN4997W Datasheet - Alfa-MOS

AFN4997W N-Channel MOSFET

AFN4997W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN4997W Features

* 90V/6.8A,RDS(ON)=68mΩ@VGS=10V 90V/5.6A,RDS(ON)=75mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1

AFN4997W Datasheet (575.30 KB)